基于GaAs工艺的6-24GHz超宽带时延幅控双向放大多功能芯片设计

Design of a 6-24 GHz Ultra-Wideband GaAs-Based Multifunctional Chip with Time-Delay and Amplitude-Controlled Bidirectional Amplification

摘要:

针对电子对抗应用收发组件对小型化多功能芯片需求,提出了新型双端口电路链路架构,并基于0.15 μm GaAs pHEMT工艺,设计了一款6~24 GHz具有时延和衰减功能的超宽带双向放大多功能芯片,实现了发射态和接收态的双向放大和芯片多功能集成,降低了电路结构的复杂性同时减小了芯片面积。芯片内部集成了接收低噪声放大器、发射功率放大器以及两个单刀双掷开关、5 bit数控衰减器、2 bit数控延时器。采用RC负反馈网络和RC并联网络对放大器性能进行优化,采用层叠结构提升了射频开关的功率容量,采用附加相移优化网络减小了衰减器的附加相移,使得该芯片在工作频段内,每个通道实现了大于9 dB的增益,输入、输出回波损耗分别小于-8 dB、-6.5 dB,接收通道噪声系数小于5.1 dB,实现了0-15.5 dB的衰减以及0-15 ps延时功能,核心芯片面积为4.64×1.44 mm2。

Abstract:

A new dual-port circuit link architecture is proposed to meet the demand of miniaturized multifunction chip for electronic warfare application transceiver components. Based on the 0.15 μm Gallium Arsenide pseudomophic High Electron Mobility Transistor process, a 6~24 GHz ultra-wide band bidirectional amplifier multifunction chip with time delay and attenuation functions is designed, which realizes bidirectional amplification of transmitting and receiving states and multi-function integration of chip, reducing the complexity of the circuit structure and the chip area. The chip integrates a receiving low noise amplifier, a transmitting power amplifier, two single-pole double-throw switches, a 5-bit numerical control attenuator and a 2-bit numerical control time delay device. The RC negative feedback network and RC parallel network are used to optimize the amplifier performance, the power capacity of the RF switch is increased by the stacked structure, and the additional phase shift is reduced by the additional phase shift optimization network. In the operating frequency band, the chip achieves a gain of more than 9 dB for each channel, the return loss of the input and output is less than -8 dB and -6.5 dB respectively and the receiving channel noise factor is less than 5.1 dB, the chip achieve an attenuation range of 0-15.5 dB and time delay range of 0-15 ps, and the core chip area is 4.64×1.44 mm2.