Virtex-5系列SRAM型FPGA单粒子效应重离子辐照试验技术研究

Heavy Ion Irradiation Test Method Research on Single Event Effects of Virtex-5 SRAM FPGA

摘要:

针对SRAM型FPGA在空间辐射环境下易发生单粒子效应，影响星载设备正常工作甚至导致功能中断的问题，开展了SRAM型FPGA单粒子效应地面辐照试验方法研究，提出了配置寄存器和BRAM的单粒子翻转效应测试方法，并以Xilinx公司工业级Virtex-5系列SRAM型FPGA为测试对象，设计了单粒子效应测试系统，开展了重离子辐照试验，获取了配置寄存器、BRAM以及典型用户电路三模冗余前与三模冗余后的单粒子翻转效应试验数据和器件单粒子闩锁试验数据，最后利用在轨预示分析软件针对高轨环境进行了在轨翻转率分析计算，可为该器件的空间应用辐射敏感性分析提供基础数据与加固设计指导。

Abstract:

To address the problem that SRAM FPGAs are prone to single-particle effect in space radiation environment, which may affect the normal operation of on-board equipment or even lead to functional interruptions, a research on the ground irradiation test method of single-particle effect of SRAM FPGAs was conducted, and the single-particle flip effect test method of configuration registers and BRAM was proposed. The single-particle effect test system was designed using the Xilinx industrial-grade Virtex-5 series SRAM FPGA as the test object, and the heavy ion irradiation test was carried out to obtain the single event upset test data of the configuration registers, BRAM and typical user circuits before and after TMR, and the single event latch-up test data of the device. Using the CREME96 model, the upset rate of configuration registers for Virtex-5 XC5VFX130 is estimated to be 6.41×10-7/bit?day and 31.6/device?day.