高精度红外辐射源温控系统硬件设计

Hardware design of temperature-control system for high-accuracy infrared radiation source

摘要:

随着红外成像技术的发展及其在探测领域应用的不断创新，对设备使用的面源黑体的有效辐射面积、控温精确性、辐射均匀性、调变温速率等方面均提出了较高的使用要求。为了优化提升红外辐射源的关键技术指标，一种基于帕尔贴效应的红外辐射源得到有效应用，围绕该红外辐射源配套使用的温控系统中的温度采集精度以及模拟电路搭建的恒压驱动等关键设计过程进行主要介绍，实验室环境下利用选取的有效辐射面积为300mm*300mm的红外辐射源进行温度精确性、辐射稳定性、变温速率等指标进行测试，测试结果表明红外辐射源的均匀性可达到（0.05+0.02|Δt|）℃，升温速率为8℃/min，降温速率为2℃/min，升温5℃并稳定时间为8min，能够实现预期使用要求。

Abstract:

With the continuous innovation of the development technology of infrared imaging detection equipment, strict requirements were put forward for the effective radiation area, stability, uniformity, heating rate and cooling rate of the black body. In order to further improve the key technical parameters of the infrared radiation source, a surface type infrared radiation source based on the Peltier effect was developed.In this paper, the key design processes of the temperature control system which regulated the infrared radiation source were introduced in detail.It included the key design of high-precision temperature acquisition and constant voltage drive of semiconductor devices. Secondly, in the laboratory environment, infrared radiation source with the effective radiation area of 300 mm*300 mm was tested particularly. The results showed that the uniformity of the infrared radiation source could reach （0.05+0.02|Δt|）℃, the heating rate was 8 ℃ / min, the cooling rate was 2 ℃ / min,the stabilization time was five minutes when Temperature rose five degrees,which achieves the expected goal.