一种MOS管自动功率老化测试系统的设计

A Design of automatic power aging test system for MOS transistors

摘要:

通过分析MOS管结温对器件可靠性的重要性，指出现有老化方法在试验过程中未能达到最高允许结温，老化不充分的问题。提出了一种测试过程中实时测量MOS管导通电阻RDS(ON)推断结温的老化方法，使老化过程中受试器件的结温尽量控制在最高允许结温附近。介绍了自动老化测试系统的构成及工作模式，详细阐述了老化板的工作原理及老化参数标定的方法。以型号为IRFB4019的MOS管作为试验对象，对测试系统进行功能验证。试验结果表明，该老化方法试验过程受试器件结温可控，能够将结温控制在最高允许温度附近，可以更加有效地剔除存在潜在问题的器件，与现有方法相比，老化更充分。

Abstract:

By analyzing the importance of PN junction temperature of MOS transistors to the reliability of devices, it is pointed out that the old method of power aging is inadequate; the maximum allowable junction temperature can’t be reached in the test process. A test method is proposed, the junction temperature is deduced by measuring the on-resistance of the MOS transistor in real time during the testing process, so that the junction temperature of the tested device can be controlled as close as possible to the maximum allowable junction temperature during the aging process. The structure and working mode of the automatic aging test system are introduced. The working principle of the aging board and the method of calibrating the aging parameters are expounded in detail. The function of the test system is verified by testing IRFB4019. The test results show that the junction temperature of the tested device can be controlled during the aging process, the junction temperature can be controlled near the maximum allowable temperature, it can eliminate devices with potential problems more effectively, compared with the old methods, the new method can aging more fully.