MCU存储器双倍速率控制技术研究

Research on double rate control technology of MCU memory

摘要:

由于传统技术缺少控制指令设置步骤，导致控制精准度较低，为了解决该问题，提出了基于拟合的存储双倍速率速率精确控制技术。根据速率计算公式，实行并行总线来获取双倍存储速率，采用分时加载方法对双倍存储速率数据进行拟合，方便控制指令的设置。分析MCU存储器控制性能，并对双倍存储速率控制设置指令，根据该控制指令分别对分时存储和空存储操作进行精确校正，实现MCU存储器双倍速率的有效控制。由实验结果表明，该技术控制精准度最高可达到98%，可以达到实际存储过程中对于双倍速率精准控制标准。

Abstract:

Due to the lack of control instruction setting steps in traditional technology, the control accuracy is relatively low. In order to solve this problem, a double rate rate accurate control technology based on fitting is proposed. According to the rate formula, parallel bus is used to get double storage rate. Time sharing loading method is used to fit double storage rate data to facilitate the setting of control instructions. The control performance of MCU memory is analyzed, and the instruction set of double storage rate control is set. According to the control instruction, the time division storage and empty storage operation are corrected accurately, and the MCU memory's double rate is effectively controlled. The experimental results show that the precision of the technology can reach up to 98%, and the precision control standard for double rate can be achieved in the actual storage process.