一种高冲击MEMS加速度传感器的仿真与优化

Research on Simulation and Optimization of a High-g MEMS Accelerometer

摘要:

基于高冲击MEMS加速度传感器的冲击灵敏度、频率响应与敏感芯片的结构尺寸存在相互制约关系,提出在满足传感器结构强度和固有频率条件下,提高传感器冲击灵敏度的理论分析、仿真模拟与实验验证的方法;运用ANSYS软件对敏感芯片的弹性膜片厚度与中心岛厚度进行多次设计与仿真,通过多组仿真数据对传感器的结构尺寸进行优化;高冲击实验验证表明,优化的传感器结构尺寸、性能指标能够满足设计要求,冲击灵敏度较高。

Abstract:

Since the structure size of the concerned sensor chip is mutually restricted with the performance of high-g MEMS accelerometer, such as the sensitivity and frequency, under the condition of the required strength and natural frequency of the sensor chip, try to improve the sensor sensitivity through size optimization, thus to improve the comprehensive performance of the sensor. After many times simulation of the diaphragm thickness and the central proof mass of the sense chip using the ANSYS software, the model size of the sensor chip is optimized according to groups of simulation data. It is verified by high-g experiments that the optimized sensor can satisfy the experimental requirement, and has high sensitivity. 